Display device

ABSTRACT

A display device includes a substrate, a barrier layer, a transistor, and a first impact buffer layer. The barrier layer is disposed on the substrate. The transistor is disposed on the barrier layer. The first impact buffer layer is disposed between the barrier layer and the transistor. The first impact buffer layer includes a nanostructure. The nanostructure includes pores.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims priority from and the benefit of Korean PatentApplication No. 10-2016-0106276, filed on Aug. 22, 2016, which is herebyincorporated by reference for all purposes as if fully set forth herein.

BACKGROUND Field

Exemplary embodiments relate to a display device.

Discussion

A display device, such as an organic light emitting diode displaydevice, a liquid crystal display device, and the like, may bemanufactured by forming several layers and elements on a substrate.Glass may be used as the substrate of the display device. A Glasssubstrate may be relatively heavy and fragile. In addition, a glasssubstrate may be relatively rigid, and, as such, may not be easilydeformed. Dissimilarly, a flexible display device including a flexiblesubstrate has been developed. The flexible substrate may have arelatively low weight, may be relatively strong against impacts, and maybe relatively easily deformable. Depending on a usage or a shape of theflexible display device, the flexible display may be classified as, forexample, a bendable display device, a foldable display device, arollable display device, a stretchable display device, and the like.Flexibility of the display device may improve as the thickness of thedisplay device reduces; however, thinner display devices may be moreeasily damaged from external impact.

The above information disclosed in this Background section is only forenhancement of understanding of the background of the inventiveconcepts, and, therefore, it may contain information that does not formthe prior art that is already known to a person of ordinary skill in theart.

SUMMARY

One or more exemplary embodiments provide a display device that isrelatively strong against external impact and has relatively excellentflexibility.

Additional aspects will be set forth in the detailed description whichfollows, and, in part, will be apparent from the disclosure, or may belearned by practice of the inventive concepts.

According to one or more exemplary embodiments, a display deviceincludes a substrate, a barrier layer, a transistor, and a first impactbuffer layer. The barrier layer is disposed on the substrate. Thetransistor is disposed on the barrier layer. The first impact bufferlayer is disposed between the barrier layer and the transistor. Thefirst impact buffer layer includes a nanostructure. The nanostructureincludes pores.

According to one or more exemplary embodiments, a display deviceincludes a substrate, a barrier layer, a patterned structure, and animpact buffer layer. The barrier layer is disposed on the substrate. Thepatterned structure is disposed on the barrier layer. The patternedstructure includes a semiconductor layer. The impact buffer layer isdisposed between the barrier layer and the patterned structure. Thepatterned structure is disposed on a first portion of the impact bufferlayer and exposes a second portion of the impact buffer layer. Theimpact buffer layer includes a nanostructure. The nanostructure includespores.

According to the exemplary embodiments, stress applied to the substratecan be minimized (or at least reduced) so that a display panel includingthe substrate can be prevented (or at least reduced) from being damagedeven through iterative bending or external impact is applied to thesubstrate. In this manner, exemplary embodiments enhance strength andreliability of the display device.

The foregoing general description and the following detailed descriptionare exemplary and explanatory and are intended to provide furtherexplanation of the claimed subject matter.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings, which are included to provide a furtherunderstanding of the inventive concept, and are incorporated in andconstitute a part of this specification, illustrate exemplaryembodiments of the inventive concept, and, together with thedescription, serve to explain principles of the inventive concept.

FIG. 1 is a cross-sectional view of a display device, according to oneor more exemplary embodiments.

FIG. 2 is a cross-sectional view of the display device of FIG. 1 in abent state, according to one or more exemplary embodiments.

FIG. 3 is a cross-sectional view of a portion of the display device ofFIG. 1, according to one or more exemplary embodiments.

FIG. 4 is a cross-sectional view of a portion of the display device ofFIG. 1, according to one or more exemplary embodiments.

DETAILED DESCRIPTION OF THE ILLUSTRATED EMBODIMENTS

In the following description, for the purposes of explanation, numerousspecific details are set forth in order to provide a thoroughunderstanding of various exemplary embodiments. It is apparent, however,that various exemplary embodiments may be practiced without thesespecific details or with one or more equivalent arrangements. In otherinstances, well-known structures and devices are shown in block diagramform in order to avoid unnecessarily obscuring various exemplaryembodiments.

As customary in the field, exemplary embodiments may be described andillustrated in the drawings in terms of functional blocks, units, and/ormodules. Those skilled in the art will appreciate that these blocks,units, and/or modules are physically implemented by electronic (oroptical) circuits, such as logic circuits, discrete components,microprocessors, hard-wired circuits, memory elements, wiringconnections, and the like, which may be formed using semiconductor-basedfabrication techniques or other manufacturing technologies. In the caseof the blocks, units, and/or modules being implemented bymicroprocessors or other similar hardware, they may be programmed andcontrolled using software (e.g., microcode) to perform various functionsdiscussed herein and may optionally be driven by firmware and/orsoftware. It is also contemplated that each block, unit, and/or modulemay be implemented by dedicated hardware, or as a combination ofdedicated hardware to perform some functions and a processor (e.g., oneor more programmed microprocessors and associated circuitry) to performother functions. Also, each block, unit, and/or module of exemplaryembodiments may be physically separated into two or more interacting anddiscrete blocks, units, and/or modules without departing from the spiritand scope of the inventive concepts. Further, the blocks, units, and/ormodules of exemplary embodiments may be physically combined into morecomplex blocks, units, and/or modules without departing from the spiritand scope of the inventive concepts.

Unless otherwise specified, the illustrated exemplary embodiments are tobe understood as providing exemplary features of varying detail ofvarious exemplary embodiments. Therefore, unless otherwise specified,the features, components, modules, layers, films, panels, regions,and/or aspects of the various illustrations may be otherwise combined,separated, interchanged, and/or rearranged without departing from thedisclosed exemplary embodiments. Further, in the accompanying figures,the size and relative sizes of layers, films, panels, regions, etc., maybe exaggerated for clarity and descriptive purposes. Also, likereference numerals denote like elements.

When an element or layer is referred to as being “on,” “connected to,”or “coupled to” another element or layer, it may be directly on,connected to, or coupled to the other element or layer or interveningelements or layers may be present. When, however, an element or layer isreferred to as being “directly on,” “directly connected to,” or“directly coupled to” another element or layer, there are no interveningelements or layers present. For the purposes of this disclosure, “atleast one of X, Y, and Z” and “at least one selected from the groupconsisting of X, Y, and Z” may be construed as X only, Y only, Z only,or any combination of two or more of X, Y, and Z, such as, for instance,XYZ, XYY, YZ, and ZZ. As used herein, the term “and/or” includes any andall combinations of one or more of the associated listed items.

Although the terms “first,” “second,” etc. may be used herein todescribe various elements, components, regions, layers, and/or sections,these elements, components, regions, layers, and/or sections should notbe limited by these terms. These terms are used to distinguish oneelement, component, region, layer, and/or section from another element,component, region, layer, and/or section. Thus, a first element,component, region, layer, and/or section discussed below could be termeda second element, component, region, layer, and/or section withoutdeparting from the teachings of the present disclosure.

Spatially relative terms, such as “beneath,” “below,” “lower,” “above,”“upper,” and the like, may be used herein for descriptive purposes, and,thereby, to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the drawings. Spatiallyrelative terms are intended to encompass different orientations of anapparatus in use, operation, and/or manufacture in addition to theorientation depicted in the drawings. For example, if the apparatus inthe drawings is turned over, elements described as “below” or “beneath”other elements or features would then be oriented “above” the otherelements or features. Thus, the exemplary term “below” can encompassboth an orientation of above and below. Furthermore, the apparatus maybe otherwise oriented (e.g., rotated 90 degrees or at otherorientations), and, as such, the spatially relative descriptors usedherein interpreted accordingly.

The terminology used herein is for the purpose of describing particularembodiments and is not intended to be limiting. As used herein, thesingular forms, “a,” “an,” and “the” are intended to include the pluralforms as well, unless the context clearly indicates otherwise. Moreover,the terms “comprises,” “comprising,” “includes,” and/or “including,”when used in this specification, specify the presence of statedfeatures, integers, steps, operations, elements, components, and/orgroups thereof, but do not preclude the presence or addition of one ormore other features, integers, steps, operations, elements, components,and/or groups thereof.

Various exemplary embodiments are described herein with reference tosectional illustrations that are schematic illustrations of idealizedexemplary embodiments and/or intermediate structures. As such,variations from the shapes of the illustrations as a result, forexample, of manufacturing techniques and/or tolerances, are to beexpected. Thus, exemplary embodiments disclosed herein should not beconstrued as limited to the particular illustrated shapes of regions,but are to include deviations in shapes that result from, for instance,manufacturing. For example, an implanted region illustrated as arectangle will, typically, have rounded or curved features and/or agradient of implant concentration at its edges rather than a binarychange from implanted to non-implanted region. Likewise, a buried regionformed by implantation may result in some implantation in the regionbetween the buried region and the surface through which the implantationtakes place. In this manner, regions illustrated in the drawings areschematic in nature and shapes of these regions may not illustrate theactual shapes of regions of a device, and, as such, are not intended tobe limiting.

Unless otherwise defined, all terms (including technical and scientificterms) used herein have the same meaning as commonly understood by oneof ordinary skill in the art to which this disclosure is a part. Terms,such as those defined in commonly used dictionaries, should beinterpreted as having a meaning that is consistent with their meaning inthe context of the relevant art and will not be interpreted in anidealized or overly formal sense, unless expressly so defined herein.

FIG. 1 is a cross-sectional view of a display device, according to oneor more exemplary embodiments. FIG. 2 is a cross-sectional view of thedisplay device of FIG. 1 in a bent state, according to one or moreexemplary embodiments.

Referring to FIG. 1, a display device 1000 includes a substrate 110, afirst impact buffer layer 130, a driver portion 300, a display portion400, and a sealing portion 500.

The substrate 110 may be a flexible substrate; however, exemplaryembodiments are not limited thereto or thereby. The substrate 110 may bestretchable, foldable, bendable, rollable, or otherwise deformable, and,as such, the entire (or a portion of) the display device 1000 may beflexible, stretchable, foldable, bendable, rollable, or otherwisedeformable.

Referring to FIG. 2, the substrate 110 may include a bending area BA inwhich the substrate 110 is bent and a non-bending area NBA neighboring(e.g., disposed outside) the bending area BA. The bending area BA may bedisposed in a central (e.g., center) portion of the substrate 110, andthe non-bending area NBA may be disposed at neighboring (e.g., outer)portions of the substrate 110. It is contemplated, however, that therespective locations of the bending area BA and non-bending area NBA maynot be limited to the illustrated locations, and, as such, may bevariously modified. For example, the bending area BA may be disposed atan outer portion of the substrate 110. As another example, the bendingarea BA may be disposed throughout the substrate 110. As seen in FIG. 2,however, the bending area BA neighbors the non-bending area NBA.

With continued reference to FIG. 2, the bending area BA of the substrate110 may be bent such that a curved portion is formed in a first (e.g.,left) side, but the bending area BA may be bent such that the curvedportion is formed in a second (e.g., right) side, middle portion, etc. Aradius of curvature of the bending area BA may be greater than 0 andless than or equal to 2R, such as greater than zero and less than 1R. Itis noted that “R” may correspond to the radius of curvature of thebending area BA. That is, the display device 1000 has flexibility sothat it can be bent in the bending area BA with the radius of curvatureof less than 2R. As will become more apparent below, the display device1000 has relatively excellent impact resistance, and, thereby, prevents(or at least reduces) the potential for the display device 1000 frombeing damaged due to external impact, iterative bending, etc.

According to one or more exemplary embodiments, the first impact bufferlayer 130, the driver portion 300, the display portion 400, and thesealing portion 500 disposed in the bending area BA may be respectivelybent corresponding to the bending of the substrate 110. To this end, thesubstrate 110 may be bent along any given direction. A given directionmay be any direction on a surface of the substrate 110. For example, thesubstrate 110 may have a rectangular shape in a plane and the givendirection may be a direction parallel to a long side or a short side ofthe substrate 110. That is, the substrate 110 may be bent along a shortside direction or a long side direction in a plane. It is alsocontemplated that the given direction may cross, e.g., diagonally cross,at least one of the short side direction and the long side direction.

FIG. 3 is a cross-sectional view of a portion of the display device ofFIG. 1, according to one or more exemplary embodiments. For descriptiveconvenience, FIG. 3 illustrates a cross-sectional structure of thedisplay device including a driving transistor, however, the displaydevice 1000 may include a switching transistor, a signal line, and thelike, in the cross-sectional structure.

Referring to FIG. 3, the driver portion 300, which is disposed betweenthe first impact buffer layer 130 and the display portion 400, mayinclude a transistor Qd, a buffer layer 140, first to third insulationlayers 150, 160, and 170, a planarization layer 180, and a pixeldefining layer 350. The display portion 400 may include a displayelement LD. The sealing portion 500 may cover the display element LD.For instance, the sealing portion 500 may hermetically seal the displayelement LD to prevent (or at least reduce) permeation of contaminants tothe display element LD.

The substrate 110 may be made of at least one of a polymer material,such as polyimide and the like, a metal material, and an inorganicmaterial; however, exemplary embodiments are not limited thereto orthereby. For instance, the substrate 110 may be made of any suitablematerial having sufficient flexibility. Further, the substrate 110 maybe provided in the form of a film, e.g., thin film.

A barrier layer 120 may be disposed between the substrate 110 and thefirst impact buffer layer 130. The barrier layer 120 is provided toprevent (or at least reduce) moisture and oxygen from permeating intothe driver portion 300 or the display portion 400 through the substrate110. The barrier layer 120 may be made of, for example, an inorganicmaterial, such as silicon oxide, silicon nitride, and the like, or anorganic material, such as polyimide, and the like. The barrier layer 120may have a single layer structure or a multi-layered structure in whichat least one layer made of an inorganic material and at least one layermade of an organic material are alternately stacked.

According to one or more exemplary embodiments, the first impact bufferlayer 130 may have a nanostructure 20 having pores 10. The nanostructure20 may include a particle having the form of a node or a branching node,and the length of the longest node may be several hundreds ofnanometers. The first impact buffer layer 130 may include a plurality ofpores 10 that are naturally formed due to the above-formed nanostructure20. In this manner, the first impact buffer layer 130 may have porosityin a given range. As such, the first impact buffer layer 130 having thenanostructure 20 may prevent (or at least reduce) layers made of aninorganic material and/or organic material from being cracked. The firstimpact buffer layer 130 may also prevent (or at least reduce) the driverportion 300 from being damaged from an external impact even thoughiterative bending and/or impact is applied to the display device 1000.

In one or more exemplary embodiments, the porosity of the first impactbuffer layer 130 may be 2% to 45%, such as 5% to 40%, e.g., 10% to 40%.When the porosity of the first impact buffer layer 130 is in theaforementioned range, the display device 1000 can assure relativelyexcellent impact resistance while having sufficient flexibility. In thismanner, the display device 1000 can be prevented (or reduced) from beingdamaged from iterative bending.

The first impact buffer layer 130 including the nanostructure 20 havingthe pores 10 may be made of, for example, a carbon-based material or anoxide-based material. The carbon-based material may be, for example, atleast one of carbon nanotubes, graphite, and graphene. The oxide-basedmaterial may be, for example, at least one of indium tin oxide (ITO),indium zinc oxide (IZO), zinc indium tin oxide (ZITO), gallium indiumtin oxide (GITO), indium oxide (In₂O₃), zinc oxide (ZnO), gallium indiumzinc oxide (GIZO), gallium zinc oxide (GZO), fluorine tin oxide (FTO),and aluminum-doped zinc oxide (AZO). Exemplary embodiments, however, arenot limited thereto or thereby.

A patterned structure is disposed on the first impact buffer layer 130.The patterned structure may include the buffer layer 140, asemiconductor layer 151, a gate electrode 124, the first insulationlayer 150, and the second insulation layer 160. On the surface of thefirst impact buffer layer 130, the patterned structure may be patternedto have a pattern P that covers a first portion of the first impactbuffer layer 130 and exposes a second portion of the first impact bufferlayer 130.

The buffer layer 140 is disposed on the first impact buffer layer 130.The buffer layer 140 provides a flat (or substantially flat) surface forforming the semiconductor layer 151, and prevents (or reduces) thepatterned structure from permeation of an impurity during one or moremanufacturing processes. The buffer layer 140 may also supply hydrogenand the like to make a characteristic of an element relativelyexcellent. The buffer layer 140 may be patterned to partially cover thefirst impact buffer layer 130 that overlaps the semiconductor layer 151.

The semiconductor layer 151 is disposed on the buffer layer 140. Thesemiconductor layer 151 may include a channel area 52 in which animpurity is not doped, and a source area 53 and a drain area 51 that aredisposed at opposite sides of the channel area 52 and are doped with animpurity. It is noted that a doped ion impurity may vary depending on atype of the transistor.

The first insulation layer 150 covers the buffer layer 140 and thesemiconductor layer 151, and a gate wire that includes the gateelectrode 124 is disposed on the first insulation layer 150. The gateelectrode 124 overlaps a portion of the semiconductor layer 151, such asthe channel area 52. The first insulation layer 150 may be, for example,made of an inorganic material that includes a nitride or an oxide. Thesecond insulation layer 160 covers the first insulation layer 150 andthe gate electrode 124. The second insulation layer 160 may be, forexample, made of an inorganic material that includes a nitride or anoxide.

The buffer layer 140, the first insulation layer 150, and the secondinsulation layer 160 may be patterned to have a pattern P that exposes aportion of the first impact buffer layer 130. For instance, in amanufacturing process, portions of the buffer layer 140, the firstinsulation layer 150, and the second insulation layer 160 notoverlapping the semiconductor layer 151 and the gate electrode 124 maybe removed using an etching process and the like such that the portionof the first impact buffer layer 130 can be exposed. Since the bufferlayer 140, the first insulation layer 150, and the second insulationlayer 160 include the pattern P that exposes the portion of the firstimpact buffer layer 130, stress applied to the display device 1000 wheniteratively bent may be dispersed so that stress concentration can besignificantly reduced. In this manner, display device 1000 may haveflexibility and impact resistance.

The third insulation layer 170 covers the patterned structure and thefirst impact buffer layer 130. The third insulation layer 170 maycontact the portion of the first impact buffer layer 130 in a regionwhere the buffer layer 140, the first insulation layer 150, and thesecond insulation layer 160 are exposed. The third insulation layer 170may be made of, for example, an organic material that includesphenylene, siloxane, or polyimide.

Data wires that include a source electrode 175 and a drain electrode 173are disposed on the third insulation layer 170. The first insulationlayer 150, the second insulation layer 160, and the third insulationlayer 170 have a first contact hole 61 and a second contact hole 62 thatoverlap the source area 53 and the drain area 51 of the semiconductorlayer 151. In this manner, the source electrode 175 and the drainelectrode 173 are electrically connected to the source area 53 and thedrain area 51 of the semiconductor layer 151 via the first contact hole61 and the second contact hole 62. The semiconductor layer 151, the gateelectrode 124, the source electrode 175 and the drain electrode 173 formthe transistor Qd. It is contemplated that the configuration of thetransistor Qd is not limited thereto or thereby. In this manner, variousconfigurations of transistors may be utilized in association withexemplary embodiments.

The planarization layer 180 is disposed on the third insulation layer170 and the data wires. The planarization layer 180 serves to remove astep difference to increase light emission efficiency of the displayelement LD. The planarization layer 180 may have a third contact hole185 that overlaps the drain electrode 173. Exemplary embodiments are notlimited to the aforementioned structure. For instance, one of theplanarization layer 180 and the third insulation layer 170 may beomitted.

The display portion 400 includes a first electrode 270, a light emissionlayer 360, and a second electrode 191. The first electrode 270 isdisposed on the planarization layer 180 in an opening 340 in the pixeldefining layer 350. The first electrode 270 may be a pixel electrode.

The first electrode 270 is connected with the drain electrode 173 viathe third contact hole 185 of the planarization layer 180. The secondelectrode 191 may be a common electrode, which may be common to morethan one first electrode 270.

The pixel defining layer 350 is disposed on the planarization layer 180.The pixel defining layer 350 may also be disposed on portions of thefirst electrode 270. As such, the pixel defining layer 350 includes anopening 340 that overlaps the first electrode 270. The light emissionlayer 360 may be disposed in the opening 340 of the pixel defining layer350. For instance, a pixel area where each light emission layer 360 isdisposed may be defined by the pixel defining layer 350. In this manner,the pixel defining layer 350 may include a pattern of openings 340, suchas a matrix pattern of openings. Exemplary embodiments, however, are notlimited thereto or thereby.

The light emission layer 360 is disposed on the first electrode 270.Although not illustrated, the light emission layer 360 may include atleast one of an emission layer, a hole injection layer (HIL), a holetransport layer (HTL), an electron transport layer (ETL), and anelectron injection layer (EIL), but exemplary embodiments are notlimited thereto or thereby. In addition, the second electrode 191 isdisposed on the light emission layer 360. As previously mentioned, thesecond electrode 191 may be a common electrode. The first electrode 270,the light emission layer 360, and the second electrode 191 form thedisplay element LD.

The first electrode 270 and the second electrode 191 may be respectivelymade of at least one of a transparent conductive material, atransflective, and a reflective conductive material. Depending on amaterial that forms the first electrode 270 and the second electrode191, the display device may be considered a top emission type, a bottomemission type, or a double-sided emission type.

The sealing portion 500 is disposed on the second electrode 191. Thesealing portion 500 seals the display element LD and a circuit portion(not shown) provided on the substrate 110 for protection from anexternal environment. The sealing portion 500 may include, for example,an organic layer and an inorganic layer that are alternately stacked,however, exemplary embodiments are not limited thereto or thereby. Astructure of the sealing portion 500 can be various modified.

FIG. 4 is a cross-sectional view of a portion of the display device ofFIG. 1, according to one or more exemplary embodiments. The displaydevice of FIG. 4 may be similar to the display device of FIG. 3, and, assuch, duplicative descriptions have been omitted to avoid obscuringexemplary embodiments.

Referring to FIG. 4, a display device may further include a secondimpact buffer layer 131 that is disposed between the substrate 110 andthe barrier layer 120. Except for the second impact buffer layer 131,the display device is the same as the above-described display device ofFIG. 3. The second impact buffer layer 131 may include the same materialas the first impact buffer layer 130. In one or more exemplaryembodiments, since the second impact buffer layer 131 is disposed belowthe barrier layer 120, the second impact buffer layer 131 may furtherinclude an organic material that can fill pores 10 of a nanostructure 20in order to improve durability of the display device. The organicmaterial may include, for example, polyimide, a polyurethane elastomer,siloxane, or a siloxane hybrid.

Although certain exemplary embodiments and implementations have beendescribed herein, other embodiments and modifications will be apparentfrom this description. As such, the inventive concepts are not limitedto such embodiments, but rather to the broader scope of the presentedclaims and various obvious modifications and equivalent arrangements.

What is claimed is:
 1. A display device comprising: a barrier layerdisposed on a substrate; a transistor disposed on the barrier layer; anda first impact buffer layer disposed between the barrier layer and thetransistor, wherein the first impact buffer layer comprises ananostructure, and wherein the nanostructure comprises pores.
 2. Thedisplay device of claim 1, wherein the first impact buffer layercomprises at least one of a carbon-based material and an oxide-basedmaterial.
 3. The display device of claim 1, wherein porosity of thefirst impact buffer layer is 2% to 45%.
 4. The display device of claim1, further comprising: a buffer layer disposed between the first impactbuffer layer and the transistor.
 5. The display device of claim 4,wherein the transistor comprises: a semiconductor layer disposed on thebuffer layer; a gate electrode disposed on the semiconductor layer; asource electrode electrically connected to the semiconductor layer; anda drain electrode electrically connected to the semiconductor layer. 6.The display device of claim 5, wherein: the buffer layer is patterned topartially cover the first impact buffer layer; and the semiconductorlayer overlaps a portion of the buffer layer.
 7. The display device ofclaim 6, further comprising: a first insulation layer disposed betweenthe semiconductor layer and the gate electrode, wherein the firstinsulation layer covers the semiconductor layer and the buffer layer. 8.The display device of claim 7, wherein: the first insulation layercomprises an inorganic material; and the inorganic material comprises anitride or an oxide.
 9. The display device of claim 7, furthercomprising: a second insulation layer disposed between the gateelectrode and the source and drain electrodes, wherein the secondinsulation layer covers the first insulation layer and the gateelectrode.
 10. The display device of claim 9, wherein: the secondinsulation layer comprises an inorganic material; and the inorganicmaterial comprises a nitride or an oxide.
 11. The display device ofclaim 9, further comprising: a third insulation layer disposed betweenthe second insulation layer and the source and drain electrodes, whereinthe third insulation layer covers the second insulation layer and thefirst impact buffer layer.
 12. The display device of claim 11, wherein:the third insulation layer comprises an organic material; and theorganic material comprises at least one of phenylene, siloxane, andpolyimide.
 13. The display device of claim 1, further comprising: asecond impact buffer layer disposed between the substrate and thebarrier layer.
 14. The display device of claim 13, wherein the secondimpact buffer layer comprises a same material as the first impact bufferlayer.
 15. The display device of claim 14, wherein the second impactbuffer layer further comprises an organic material.
 16. The displaydevice of claim 15, wherein the organic material comprises at least oneof polyimide, a polyurethane elastomer, siloxane, and a siloxane hybrid.17. A display device comprising: a barrier layer disposed on asubstrate; a patterned structure disposed on the barrier layer, thepatterned structure comprising a semiconductor layer; and an impactbuffer layer disposed between the barrier layer and the patternedstructure, wherein: the patterned structure is disposed on a firstportion of the impact buffer layer and exposes a second portion of theimpact buffer layer; the impact buffer layer comprises a nanostructure;and the nanostructure comprises pores.
 18. The display device of claim17, wherein the patterned structure further comprises: a buffer layerdisposed between the semiconductor layer and the first portion of theimpact buffer layer; a first insulation layer covering the semiconductorlayer and the buffer layer; a gate electrode disposed on the firstinsulation layer, the gate electrode overlapping the semiconductorlayer; and a second insulation layer covering the gate electrode and thefirst insulation layer.
 19. The display device of claim 18, furthercomprising: a third insulation layer covering the patterned structureand the impact buffer layer, the third insulation layer contacting thesecond portion of the impact buffer layer; a source electrodeelectrically connected to the semiconductor layer via a first contacthole formed in the first, second, and third insulation layers; and adrain electrode electrically connected to the semiconductor layer via asecond contact hole formed in the first, second, and third insulationlayers, wherein the third insulation layer is disposed between thesubstrate and each of the source electrode and the drain electrode. 20.The display device of claim 17, further comprising: an additional impactbuffer layer disposed between the substrate and the barrier layer,wherein the additional impact buffer layer comprises the same materialas the impact buffer layer.